3.6 Reactive Ion Etching
The principles of reactive ion etching are the same as those in reactive sputtering. The exception is that the sample to be etched is used as the target from which atoms are removed. For further information see [113].
A previously in-house built RIE system was used for this work; this system was modified from a plasma deposition system (model no. DP80 with load lock option) manufactured by Plasma Technology (UK) Ltd. [114]. It was used in the dry etching of ITO and the results are discussed in section 5.2. The system will be briefly described here. It is fitted with Ar, O2 and Freon gas sources and is capable of delivering up to 200W r.f. power. The sample to be etched is placed on a glass slab in the centre of the chamber. It is then evacuated to pressures better than 1x10-4 torr using a turbo pump; the etchant gas is then flowed in at a constant rate regulated by flow controllers. The r.f. power is then switched on to start the etching.
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