"Study of Indium Tin Oxide (ITO) for Novel
Optoelectronic Devices"
Ph.D. thesis by Shabbir A Bashar
8. Further Work
The following work is recommended as a follow-up to this study:
- Further analysis of the ITO film, particularly a surface study using AFM or similar
instrument.
- DLTS measurements on the devices with ITO contacts to quantify/assess the sputter
induced damage to the underlying epitaxial layers and substrate if any. In particular study
in detail the nature and the cause of the damage deep into the semiconductor substrate as
suggested by CV profiling. An experiment may be designed to incur the sputter damage
and remove the ITO deposit chemically; then re-deposit a metal Schottky contact and
repeat the CV profiling in order to isolate any possible effects due to the ITO layer. The
damage study should also be extended to HBT wafers to examine its effect on highly doped
substrates.
- Further study the effect of varying the thickness of the indium film between the ITO and the
semiconductor to understand its effect on sputter damage limitation and thus enhancement
of device performance.
- Fabrication of small geometry ITO/n-GaAs Schottky diodes with improved series resistance
followed by a test of their small signal performance.
- Fabrication and testing of small geometry ITO emitter contact InP/InGaAs HPTs.
- Incorporate the spectral response model with existing HBT current-voltage models to
further understand the optical performance of heterojunction phototransistors in particular
the trade-offs involved in top versus edge illumination.
© 1998: Shabbir A. Bashar (in accordance with paragraph 8.2d, University of London
Regulations for the Degrees of M.Phil. and Ph.D., October 1997). The Copyright of
this thesis rests with the author, and no quotation from it or information derived
from it may be published without the prior written consent of the author.
This page is hosted by Dr. Shabbir A. Bashar,
e-mail: shabbir@betelco.com
