References:

1. K. L. Chopra, S. Major and D. K. Pandya, "Transparent Conductors - A Status Review", Thin Solid Films, 102, 1983, pp. 1 - 46

2. S. A. Bashar and A. A. Rezazadeh, "Optically Transparent ITO Emitter Contacts in the Fabrication of InP/InGaAs HPTs", IEEE Transactions on Microwave Theory and Techniques, MTT-43(9), 1995, pp. 2299-2303

3. J. C. C. Fan and J. B. Goodenough, "X-Ray Photoemission Spectroscopy Studies of Sn- doped Indium Oxide Films"Journal of Applied Physics, 48(8), 1977, pp. 3524 - 3531

4. P. Nath and R. F. Bunshah, "Preparation of In2O3 and Tin-Doped In2O3 Films by a Novel Activated Reactive Evaporation Technique", Thin Solid Films, 69, 1980, pp. 63 - 68

5. J. C. C. Fan, F. J. Bachner and G. H. Foley, "Effect of Oxygen Partial Pressure During Deposition on Properties of r.f. Sputtered Sn-Doped In2O3 Films", Applied Physics Letters, 31(11), 1977, pp. 773 - 775

6. K. Sreenivas, T. Sundarsena Rao, A. Mansnigh and S. Chandra, "Preparation and Characterization of r.f. Sputtered Indium Tin Oxide Films", Journal of Applied Physics, 57(2), 1985, pp. 384 - 392

7. J. Szczyrbowski, A. Dietrich and H. Hoffmann, "Optical and Electrical Properties of r.f. Sputtered Indium-Tin Oxide Films", Phys Stat Sol (a), 78, 1983, pp. 243 - 252

8. M. Buchanan, J. B. Webb and D. F. Williams, "The Influence of Target Oxidation and Growth Related Effects on the Electrical Properties of Reactively Sputtered Films of Tin-Doped Indium Oxide", Thin Solid Films, 80, 1981, pp. 373 - 382

9. M. Higuchi, S. Uekusa, R. Nakano and K. Yokogawa, "Post-Deposition Annealing Influence on Sputtered Indium Tin Oxide Film Characteristics", Japanese Journal of Applied Physics, 33, 1994, pp. 302 - 306

10. N. Balasubramanian and A. Subrahmanyam, "Effect of Substrate Temperature on the Electrical and Optical Properties of Reactively Evaporated Indium Tin Oxide Films", Materials Science and Engineering, B1, 1988, pp. 279 - 281

11. J. Bregman, Y. Shapira and H. Aharoni, "Effects of Oxygen Partial Pressure During Deposition on the Properties of Ion-Beam-Sputtered Indium-Tin Oxide Thin Films", Journal of Applied Physics, 67(8), 1990, pp. 3750 - 3753

12. H. Haitjema and J. J. Ph. Elich, "Physical Properties of Pyrolitically Sprayed Tin-Doped Indium Oxide Coatings", Thin Solid Films, 205, 1991, pp. 93 - 100

13. N. Balasubramanian and A. Subrahmanyam, "Electrical and Optical Properties of Reactively Evaporated Indium Tin Oxide (ITO) Films - Dependence on Substrate Temperature and Tin Concentration", Journal of Physics D: Applied Physics, 22, 1989, pp. 206 - 209

14. L. Gupta, A. Mansingh and P. K. Srivastava, "Band Gap Narrowing and the Band Structure of Tin Doped Indium Oxide Films", Thin Solid Films, 176, 1989, pp. 33 - 44

15. J. L. Yao, S. Hao and J. S. Wilkinson, "Indium Tin Oxide Films by Sequential Evaporation", Thin Solid Films, 189(2), 1990, pp. 227 - 233

16. J. Dutta and S. Ray, "Variations in Structural and Electrical Properties of Magnetron- Sputtered Indium Tin Oxide Films with Deposition Parameters", Thin Solid Films, 162(1-2), 1988, pp. 119 - 127

17. S. Ashok, P. P. Sharma and S. J. Fonash, "Spray-Deposited ITO-Silicon SIS Heterojunction Solar Cells", IEEE Transactions on Electron Devices, ED-27(4), 1980, pp. 725 - 730

18. B. Bessais, N. Mliki and R. Bennaceur, "Technological, Structural and Morphological Aspects of Screen-Printed ITO Used in ITO/Si Type Structure", Semiconductor Science and Technology, 8, 1993, pp. 116 - 121

19. E. H. Rhoderick, "Metal-Semiconductor Contacts" IEE Proceedings-I Solid-State and Electron Devices, 129(1), 1982, pp. 1 - 14

20. E. H. Rhoderick and R. H. Williams, "Metal-Semiconductor Contacts", (Publishers: Clarendon Press, Oxford), 2nd Edition, 1988

21. F. A. Padovani and R. Stratton, "Field and Thermionic-Field Emission in Schottky Barriers", Solid State Electronics, 9, 1966, pp 695 - 707

22. D. Donoval, M. Barus and M. Zdimal, "Analysis of I-V Measurements on PtSi-Si Schottky Structures in a Wide Temperature Range", Solid State Electronics, 34(12), 1991, pp 1365 - 1373

23. S. M. Sze, "Metal-Semiconductor Contacts", in Physics of Semiconductor Devices, (Publishers: J Wiley & Sons, Singapore), 2nd Edition 1981, pp 250 - 254

24. C. R. Crowell and V. L. Rideout, "Normalised Thermionic-Field (T-F) Emission in Metal-Semiconductor (Schottky) Barriers", Solid State Electronics, 12, 1969, pp 89 - 105

25. V. L. Rideout, "A Review of the Theory and Technology for Ohmic Contacts to Group III-V Compound Semiconductors", Solid State Electronics, 18, 1975, pp. 541 - 550

26. A. Piotrowska, A. Guivarc'h and G. Pelous, "Ohmic Contacts to III-V Compound Semiconductors: A Review of Fabrication Techniques", Solid State Electronics, 26(3), 1983, pp. 179 - 197

27. J. Gyulai, J. W. Mayer, V. Rodriguez, A. Y. C. Yu and H. J. Copen, "Alloying Behaviour of Au and AuGe on GaAs", Journal of Applied Physics, 42(9), 1971, pp. 3578 - 3585

28. F. L�nnum, J. S. Johannessen, "Effect of Au:Ge Thickness on Ohmic Contacts to GaAs", Electronics Letters, 22(12), 1986, pp. 632 - 633

29. F. Ren, A. B. Emerson, S. J. Pearton, T. R. Fullowan and J. M. Brown, "Improvement of Ohmic Contacts on GaAs with In Situ Cleaning", Applied Physics Letters, 58(10), 1991, pp. 1030 - 1032

30. C. L. Chen, L. J. Mahoney, M. C. Finn, R. C. Brooks, A. Chu and J. G. Mavroides, "Low Resistance Pd/Ge/Au and Ge/Pd/Au Ohmic Contacts to n-type GaAs", Applied Physics Letters, 48(8), 1986, pp. 535 - 537

31. J. T. Lai and J. Y. Lee, "Redistribution of Constituent Elements in Pd/Ge Contacts to n- type GaAs Using Rapid Thermal Annealing", Journal of Applied Physics, 76(3), 1994, pp. 1686 - 1690

32. T. Sanada and O. Wada, "Ohmic Contacts to p-GaAs with Au/Zn/Au Structure", Japanese Journal of Applied Physics, 49(8), 1980, pp. L491 - L494

33. A. Katz, C. R. Abernathy and S. J. Pearton, "Pt/Ti Ohmic Contacts to Ultrahigh Carbon Doped p-GaAs Formed by Rapid Thermal Processing", Applied Physics Letters, 56(11), 1990, pp. 1026 - 1030

34. W. L. Chen, J. C. Cowles, G. I. Haddad, G. O. Munns, K. W. Eisenbeiser and J. R. East, "Ohmic Contact Study for Quantum Effect Transistors and Heterojunction Bipolar Transistors with InGaAs Contact Layers", Journal of Vacuum Science and Technology, B10(6), 1992, pp. 2354 - 2360

35. A. Katz, A. El-Roy, A. Feingold, M. Geva, N. Moriya, S. J. Pearton, E. Lane, T. Keel and C. R. Abernathy, "W(Zn) Selectively Deposited and Locally Diffused Ohmic Contacts to p-InGaAs/InP Formed by Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition", Applied Physics Letters, 62(21), 1993, pp. 2652 - 2654

36. W. Shockley, US Patent no. 2 569 347, 1951

37. H. Kromer, "Theory of a Wide-Gap Emitter for Transistors", Proceedings of the IRE, 45, 1957, pp. 1535 - 1537

38. H. Kromer, "Heterostructure Bipolar Transistors and Integrated Circuits", Proceedings of the IEEE, 70(1), 1982, pp. 13-25

39. M. B. Das, "HBT Device Physics and Models" in HEMTs and HBTs: Devices, Fabrication and Circuits, (Editors: F. Ali and A. Gupta; Publishers: Artech House Inc., USA), Chapter 4, 1991, pp. 191 - 251

40. J. Batey and S. L. Wright, "Energy Band Alignment in GaAs:(Al,Ga)As Heterostructures: The Dependence on Alloy Compositions", Journal of Applied Physics, 59(1), 1986, pp. 200 - 209

41. T. Kobayashi, K. Taira, F. Nakamura and H. Kawai, "Band Lineup for a GaInP/GaAs Heterojunction Measured by a High Gain N-p-n Heterojunction Bipolar Transistor Grown by Metalorganic Chemical Vapor Deposition", Journal of Applied Physics, 65(12), 1989, pp. 4898 - 4902

42. D. Biswas, N. Debbar, P. Bhattacharya, "Conduction and Valence Band Offsets in GaAs/Ga0.51In0.49P Single Quantum Wells Grown by Metal Chemical Vapor Deposition", Applied Physics Letters, 56(9), 1990, pp. 833 - 835

43. M. A. Rao, E. J. Caine, H. Kroemer, S. I. Long and D. I. Babic, "Determination of Valence and Conduction Band Discontinuities at the (Ga, In)P/GaAs Heterojunction by C-V Profiling", Journal of Applied Physics, 61(2), 1987, pp. 643 - 649

44. D. V. Lang, M. B. Panish, F. Capasso, J. Allam, R. A. Hamm, A. M. Sergent and W. T. Tsang, "Measurement of Heterojunction Band Offsets by Admittance Spectroscopy: InP/Ga0.47In0.53As", Applied Physics Letters, 50(12), 1987, pp. 736 - 738

45. P. M. Asbeck, M. C. F. Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, K. C. Wang "GaAlAs/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application", IEEE Transactions on Electron Devices, ED-36(10), 1989, pp. 2032 - 2042

46. D. V. Morgan and A. A. Rezazadeh, "Current Transport Mechanism in N-p-n GaAs/AlGaAs Heterojunction Bipolar Transistors", GEC Journal of Research, 6(1), 1988, pp. 37 - 43

47. G. O. Ladd and D. L. Feucht, 'Performance Potential of High Frequency Heterojunction Transistors', IEEE Transactions on Electron Devices, 17, 1970, pp. 413 - 420

48. W. A. Hughes, A. A. Rezazadeh and C. E. Wood, "The Heterojunction Bipolar Transistor (HBT)" in GaAs Integrated Circuits, (Editor: J. Mun; Publishers: Blackwell Scientific Publications Ltd, UK), Chapter 7, 1988, pp. 403 - 429

49. R. A. Hamm, M. B. Panish, R. N. Nottenburg, Y. K. Chen and D. A. Humphrey, "Ultrahigh Be Doping of Ga0.47In0.53As/InP by Low-Temperature Molecular Beam Epitaxy", Applied Physics Letters, 54(25), 1989, pp. 2586 - 2588

50. Y. K. Chen, R. N. Nottenburg, M. B. Panish, R. A. Hamm and D. A. Humprey, "Sub- picosecond InP/InGaAs Heterojunction Transistors", IEEE Electron Device Letters, 10(6), 1989, pp. 267 - 269

51. S. R. Forrest, "Monolothic Optoelectronic Integration: A New Component Technology for Lightwave Communications", IEEE Transactions on Electron Devices, 32(12), 1985, pp. 2640 - 2655

52. D. Reudink, 'Advanced Concepts and Technologies for Communications Satellites' in Advanced Digital Communications, (Editor: K. Feher; Publishers: Prentice Hall, USA), Chapter 11, 1987.

53. T. Miya, Y. Terunuma, T. Hosaka and T. Miyashita, "Ultimate Low Loss Single-Mode Fiber at 1.55 mm", Electronic Letters, 15, 1979, pp. 106 - 108

54. S. E. Miller and I. P. Kaminow, 'Optical Fiber Telecommunications II', (Publishers: Academic Press Inc., USA), 1988

55. P. Cochrane, D. J. T. Heatley, P. P. Smyth and I. D. Pearson, "Optical Telecommunications - Future Prospects", Electronics and Communication Engineering Journal, Aug. 1993, pp. 221 - 232

56. D. K. Paul, K. H. Greene and G. A. Keopf, "Undersea Fiber Optic Cable Communication System of the Future: Operational, Reliability and System Considerations", IEEE Journal of Lightwave Technology, LT-2(4), 1984, pp. 414 - 425

57. P. K. Runge and P. R. Trischitta, "The SL Undersea Lightwave System", IEEE Journal of Selected Areas in Communications, SAC-2(6), 1984, pp.784 - 793

58. K. Amano, "Optical Fiber Submarine Cable Systems", IEEE Journal of Lightwave Technology, 8(4), 1990, pp. 595 - 609

59. P. K. Runge, "Undersea Lightwave Systems", AT&T Technical Journal, 71(1), 1992, pp. 5 - 13

60. Blanc et al, "Optical Fiber Submarine Transmission Systems", in Commutations and Transmission, (Publishers: SOTELEC, France), 1989, pp.75 - 94

61. J. M. Senior, "Optical Fiber Communications", (Published by: Prentice Hall Inc., New Jersey, USA), 2nd Edition, 1992

62. M. Brain and T. Lee, "Optical Receivers for Lightwave Communication Systems", IEEE Transactions on Electron Devices, ED-32(12), 1985, pp. 2673 - 2692

63. T. Lee, C. A. Burrus and A. G. Dentai, "InGaAs/InP p-i-n Photodiodes for Lightwave Communications at the 0.95 - 1.65 mm Wavelength", IEEE Journal of Quantum Electronics, QE-17(2), 1981, pp. 232 - 238

64. T. P. Pearsall, M. Piskorski, A. Brochet and J. Chevrier, "A Ga0.47In0.53As/InP Heterophotodiode with Reduced Dark Current", IEEE Journal of Quantum Electronics, QE-17(2), 1981, pp. 255 - 259

65. J. E. Bowers and C. A. Burrus, "Ultrawide-Band Long-Wavelength p-i-n Photodetectors", Journal of Lightwave Technology, LT-5(10), 1987, pp. 1339 - 1350

66. H. Ando, Y. Yamauchi, H. Nakagome, N. Susa and H. Kanbe, "InGaAs/InP Separated Absorption and Multiplication Regions Avalanche Photodiode Using Liquid-and-Vapor- Phase Epitaxies", IEEE Journal of Quantum Electronics, QE-17(2), 1981, pp. 250 - 254

67. J. C. Campbell, A. G. Dentai, W. S. Holder and B. L. Kasper, "High Performance Avalanche Photodiode with Separate Absorption 'Grading' and Multiplication Regions", Electronics Letters, 19, 1983, pp. 818 - 820

68. F. Capasso, W. T. Tsang, A. L. Hutchinson and G. F. Williams, "Enhancement of Electron Impact Ionization in a Superlattice: A New Avalanche Photodiode with a Large Ionization Rate Ratio", Applied Physics Letters, 40(1), 1982, pp. 38 - 40

69. T. Kagawa, H. Asai and Y. Kawamura, "An InGaAs/InAlAs Superlattice Avalanche Photodiode with a Gain Bandwidth Product of 90 GHz", IEEE Photonics Technology Letters, 3(9), 1991, pp. 815 - 817

70. D. G. Parker and P. G. Say, "Indium Tin Oxide/GaAs Photodiodes for Millimetric-Wave Applications", Electronics Letters, 22(23), 1986, pp. 1266 - 1267

71. S. Y. Wang and D. M. Bloom, "100 GHz Bandwidth Planar GaAs Schottky Photodiode", Electronics Letters, 19, 1983, pp. 554 - 555

72. N. Emeis, H. Schumacher and H. Beneking, "High Speed GaInAs Schottky Photodetector", Electronics Letters, 21(5), 1985, pp. 180 - 181

73. D. G. Parker, P. G. Say and A. M. Hansom, "110 GHz High Efficiency Photodiodes Fabricated from Indium Tin Oxide/GaAs", Electronics Letters, 23, 1987, pp. 527 - 528

74. A. A. De Salles, M. A. Romero, "Al0.3Ga0.7As/GaAs MESFETs Under Optical Illumination", IEEE Transactions on Microwave Theory and Techniques, MTT-39(12), 1991, pp. 2010 - 2017

75. R. N. Simons, "Microwave Performance of an Optically Controlled AlGaAs/GaAs High Electron Mobility Transistor and GaAs MESFET", IEEE Transactions on Microwave Theory and Techniques, MTT-35(12), 1987, pp. 1444 - 1455

76. J. Seymour, "Field Effect Transistors and Charge Transfer Devices" in Electronic Devices and Components, (Publishers: Longman Scientific and Technical, UK), Second Edition, Chapter 6, 1988, pp. 258 - 320

77. W. A. Hughes, A. A. Rezazadeh and E. C. Wood, "The High Electron Mobility Transistor" in GaAs Integrated Circuits, (Editor: J. Mun; Publishers: Blackwell Scientific Publications Ltd, UK), Chapter 7, 1988, pp. 378 - 402

78. P. Chakrabarti, N. L. Shrestha, S. Srivastava and V. Khemka, "An Improved Model of Ion-Implanted GaAs OPFET", IEEE Transactions on Electron Devices, ED-39(9), 1992, pp. 2050 - 2059

79. A. H. Khalid, S. A. Bashar and A. A. Rezazadeh,"Fabrication and Characterisation of a Transparent Gate HEMT Using Indium Tin Oxide" Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, London, UK, 14th November, 1994, pp. 99-104

80. K. Tabatabaie-Alavi and C. G. Fonstad (Jr), "Performance Comparison of Heterojunction Phototransistors, p-i-n FET's, and APD-FETs for Optical Fiber Communication Systems", IEEE Journal of Quantum Electronics, QE-17(12), 1981, pp. 2259 - 2261

81. H. Wang, C. Bacot, C. Gerard, J. L. Lievin, C. Dubon-Chevallier, D. Ankri and A. Scavennec, "GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140Mbit/s", IEEE Transactions on Microwave Theory and Techniques, MTT-34(12), 1986, pp. 1344 - 1348

82. H. Beneking, P. Mischel and G. Schul "High-Gain Wide-Gap-Emitter Ga1-xAlxAs-GaAs Phototransistor", Electronics Letters, 12(16), 1976, pp. 395 - 396

83. Z. Urey, D. Wake, D. J. Newson and I. D. Henning, "Comparison of InGaAs Transistors as Optoelectronic Mixers", Electronic Letters, 29(20), 1993, pp. 1796 - 1797

84. T. Moriizumi and K. Takahashi, "Theoretical Analysis of Heterojunction Phototransistors", IEEE Transactions on Electron Devices, ED-19(2), 1972, pp. 152 - 159

85. R. A. Milano, P. D Dapkus and G. E. Stillman, "An Analysis of the Performance of Heterojunction Phototransistors for Fiber Optic Communications", IEEE Transactions on Electron Devices, ED-29(2), 1982, pp. 266 - 274

86. S. Sze, "LED and Semiconductor Lasers" in Physics of Semiconductor Devices, (Publishers: John Wiley and Sons, NY), Second Edition, Chapter 12, 1981, pp. 681 - 742

87. Y. H. Aliyu, D. V. Morgan, H. Thomas and S. W. Bland, "Low Turn-on Voltage AlGaInP LEDs Using Thermally Evaporated Transparent Conducting Indium Tin Oxide (ITO)", Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, London, UK, 14th November, 1995, pp. 82 - 87

88. M. A. Matin, A. F. Jezierski, S. A. Bashar, D. E. Lacklison, T. M. Benson, T. S. Cheng, J. S. Roberts, T. E. Sale, J. W. Orton, C. T. Foxon and A. A. Rezazadeh, "Optically Transparent Indium Tin Oxide (ITO) Ohmic Contacts in the Fabrication of Vertical Cavity Surface Emitting Lasers", Electronic Letters, 30(4), 1994, pp. 318 - 320 (and 532)

89. L. D. Tzeng and R. E. Frahm, "Wide Bandwidth Low Noise p-i-n/FET Receiver for High-Bit-Rate Optical Preamplifier Applications", Electronics Letters, 24(18), 1988, pp. 1132 - 1133

90. S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, D. Ritter, R. A. Hamm, M. B. Panish and G. J. Qua, "A 10 Gbit/s OEIC Photoreceiver Using InP/InGaAs Heterojunction Bipolar Transistors", Electronics Letters, 28(5), 1992, pp. 466 - 468

91. W. A. Hughes and D. G. Parker, "Operation of a High Frequency Photodiode-HEMT Hybrid Photoreceiver at 10 GHz", Electronics Letters, 22(10), 1986, pp. 509 - 510

92. J. L. Gimlett, "Low Noise p-i-n/FET Optical Receiver", Electronics Letters, 23(6), 1987, pp. 281 - 283

93. M. A. R. Violas, D. J. T. Heatley, X. Y. Gu, D. A. Cleland and W. A. Stallard, "Heterodyne Detection at 4 Gbit/s Using a Simple p-i-n/HEMT Receiver", Electronics Letters, 27(1), 1991, pp. 59 - 61

94. D. Wake, R. H. Walling, I. D. Henning and D. G. Parker "Planar-Junction, Top- Illuminated GaInAs/InP p-i-n photo diode with Bandwidth of 25 GHz", Electronics Letters, 25(15), 1989, pp. 967 - 968

95. D. Wake, D. J. Newson, M. J. Harlow and I. D. Henning, "Optically Biased, Edge- Coupled InP/InGaAs Heterojunction Phototransistors", Electronics Letters, 29(25), 1993, pp. 2217 - 2218

96. W. Q. Li, M. Karakucuk, J. Kulman, J. R. East, G. I. Haddad and P. K. Bhattacharya, "High Frequency GaAs/Al0.25Ga0.75As Heterojunction Bipolar Transistors with Transparent Indium Tin Oxide Emitter Contacts", Electronics Letters, 29(25), 1993, pp. 2223 - 2225

97. D. W. Pashley, "The Basics of Epitaxy" in Growth and Characterisation of Semiconductors, (Editors: R. A. Stradling and P. C. Klipstein; Publishers: Adam Hilger, New York), 1990, pp. 1 - 16

98. B. G. Streetman, "Crystal Properties and Growth of Semiconductors" in Solid State Electronic Devices, (Publishers: Prentice-Hall, New Jersey, USA), 1980, pp. 1 - 27

99. J. O. Williams, "Metal Organic Chemical Vapour Deposition (MOCVD) for the Preparation of Semicondutor Materials and Devices" in Growth and Characterisation of Semiconductors, (Editors: R. A. Stradling and P. C. Klipstein; Publishers: Adam Hilger, New York), 1990, pp. 17 - 33

100. M. Lundstrom, "III-V Heterojunction Bipolar Transistors", in Heterojunction Transistors and Small Size Effects in Devices, (Editor: M. Willander, Publishers: Studentlitteratur, Sweden), 1992, pp. 35 - 46

101. C. T. Foxon and B. A. Joyce, "Growth of Thin Films and Heterostructures of III-V Compounds by Molecular Beam Epitaxy", in Growth and Characterisation of Semiconductors, (Editors: R. A. Stradling and P. C. Klipstein; Publishers: Adam Hilger, New York), 1990, pp. 35 - 64

102. R. V. Stuart, "Vacuum Technology, Thin Films and Sputtering", (Published by: Academic Press, London) Chapter 4, 1983, pp. 123 - 131

103. J. L. Vossen and J. J. Cuomo, "Glow Discharge Sputter Deposition" in Thin Film Processes, (Editors: J. L. Vossen and Werner Kern, Publishers: Academic Press, New York), Part II-1, 1978, pp. 12 - 73

104. "Handbook On RF Sputtering with the NM 1500 Sputtering Module", Nordiko Ltd., Brockhampton Lane, Havant, Hants. PO9 1JB, U.K.

105. Available from: "Ablestik Electronic Materials and Adhesive" subsidiary of "National Starch and Chemical Co.", 20021 Susana Road, Rancho Dominguez, CA 90221, USA

106. Source of ITO sputtering targets: "Testbourne Ltd.", Unit 12, Hassocks Wood, Stroudly Road, Basingstoke, Hampshire RG24 0NE, UK

107. R. C. Jaeger, "Lithography" in Introduction to Microelectronic Fabrication, Modular Series on Solid State Devices, (Series Edited by: G. W. Neubeck, R. F. Pierret, Published by: Addison-Wesley Publishing Co. Inc., New York), Vol. 5, Chapter 2, 1988, pp. 13 - 28

108. K. L. Chopra and I. Kaur, "Thin Film Device Applications", (Published by: Plenum Press, New York) Chapter 1, 1983, pp. 14 - 18

109. R. V. Stuart, "Vacuum Technology, Thin Films and Sputtering", (Published by: Academic Press, London) Chapter 3, 1983, pp. 65 - 89

110. R. E. Williams, "Wet Etching" in Gallium Arsenide Processing Technology, (Published by: Artech House, Massachussetts) Chapter 5, 1984, pp. 101 - 123

111. W. Kern and C. A. Deckert, "Etching Processes" in Thin Film Processes" (Edited by : J. L. Vossen and W. Kern; Published by Academic Press, London) Part V, 1978, pp. 401 - 496

112. M. Konagai, K. Katsukawa and K. Takahashi, "(GaAl)As/GaAs Heterojunction Phototransistors with High Current Gain", Journal of Applied Physics, 48(10), 1977, pp. 4389 - 4394

113. C. M. Melliar-Smith and C. J. Mogab, "Plasma Assisted Etching Techniques for Pattern Delineation" in Thin Film Processes, (Editors: J. L. Vossen and Werner Kern, Publishers: Academic Press, New York), Part V, 1978, pp. 497 - 556

114. Plasma Technology (UK) Ltd., Lawrence Rd., Wrington, Avon BS18 7QF, UK

115. "Talystep Operating Instructions", Rank Taylor Hobson Ltd., P. O. Box 36, Newstar Rd., Thurmaston Lane, Leicester LE4 7JQ, UK

116. J. Bitsakis, "Atomic Force Microscopy" in Non-Alloyed Ohmic Contacts to n-GaAs Grown by MBE, University of Manchester Institute of Science and Technology, M.Sc. Thesis 1996, Chapter 5, pp. 77 - 99

117. J. Seymour, "Reverse Breakdown Mechanisms" in Electronic Devices and Components, (Published by: Longman Scientific and Technical, Essex, UK), Chapter 3, Second Edition, 1988, pp. 110 - 117

118. Available from Promatech Ltd., Unit E&F, The Old Brickyard, Aston Keynes, Wiltshire SN6 6QX, UK

119. G. K. Reeves and H. B. Harrison, "Obtaining the Specific Contact Resistance from Transmission Line Model Measurements", IEEE Transactions on Electron Devices, EDL-3(5), 1982, pp. 111 - 113

120. H. B. Harrison, "Characterising Metal Semiconductor Ohmic Contacts", Proceedings of IREE, 41, 1980, pp. 95 - 100

121. F. Amin, "TLM Measurements using Auto-TLM System", M.Phil. Transfer Report, King's College London, 1995, pp. 17 - 19

122. T. C. Lee, S. Fung, C. D. Beling and H. L. Au, "A Systematic Approach to the Measurement of Ideality Factor, Series Resistance and Barrier Height for Schottky Diodes", Journal of Applied Physics, 72(10), 1992, pp. 4739 - 4742

123. E. K. Evangelou, L. Papadimitriou, C. A. Dimitriades, G. E. Giakoumakis, "Extraction of Schottky Diode (and p-n Junction) Parameters from I-V Characteristics", Solid State Electronics, 36(11), 1993, pp. 1633 - 1635

124. N. Brutscher and M. Hoheisel, "Schottky Diodes with High Series Resistance: A Simple Method of Determining the Barrier Heights", Solid State Electronics, 31(1), 1988, pp. 87 - 89

125. I. E. Getreu, "Modelling the Bipolar Transistor", (Published by: Elsevier Science Publishers, The Netherlands), 1983

126. M. E. Kim, B. Bayraktaroglu and A. Gupta, "HBT Devices and Applications" in HEMTs and HBTs: Devices, Fabrication and Circuits, (Edited by: F. Ali and A. Gupta; Published by: Artech House Inc., USA), Chapter 5, 1991, pp. 253 - 369

127. C. T. Kirk, "A Theory of Transistor Cutoff Frequency, fT, Fall Off at High Current Densities", IRE Transactions on Electron Devices, ED-9, 1962, pp. 164 - 174

128. J. Hilibrand and R. D. Gold, "Determination of the Impurity Distribution in Junction Diodes From Capacitance-Voltage Measurements", RCA Review, 1960, pp. 245 - 252

129. K. Iniewski, M. Liu and C. A. T. Salama, "Doping Profiles Characterisation in GaAs Semi-insulating Substrates Using Capacitance-Voltage, Conductance-Voltage and Current-Voltage Measurements", Journal of Vacuum Science and Technology, B12(1), 1994, pp. 327 - 331

130. A. M. Goodman, "Metal-Semiconductor Barrier Height Measurement by the Differential Capacitance Method - One Carrier System", Journal of Applied Physics, 34(2), 1963, pp. 329 - 338

131. D. W. Palmer, "Characterisation of Semiconductors by Capacitance Method" in Growth and Characterisation of Semiconductors, (Editors: R. A. Stradling and P. C. Klipstein; Publishers: Adam Hilger, New York), 1990, pp. 187 - 224

132. S. Blight, "The Role of CV Profiling in Semiconductor Characterization", Solid State Technology, 1990, pp. 175 - 179

133. P. K. Vasudev, B. L. Mattes, E. Pietras and R. H. Bube, "Excess Capacitance and Non- ideal Schottky Barriers on GaAs", Solid State Electronics, 19, 1976, pp. 557 - 559

134. J. A. Copeland, "Diode Edge Effect on Doping-Profile Measurements", IEEE Transactions on Electron Devices, ED-17(5), 1970, pp. 404 - 407

135. K. Krane, Modern Physics, (Published by: Wiley & Sons, USA), 1983, pp. 61 - 66

136. J. Wilson and J. Hawkes, "Light Sources - Blackbody Radiation" in Optoelectronics, An Introduction, (Published by: Prentice Hall, UK), Chapter 1, 1983, pp. 23 - 26

137. L. J. van der Pauw, "A Method of Measuring Specific Resistivity and Hall Effects of Discs of Arbitrary Shape", Philips Research Reports, 13, 1958, pp. 1 - 9

138. F. M. Smits, "Measurement of Sheet Resisitivities with the Four-Point Probe", Bell System Technical Journal, 37(3), 1958

139. H. W. Zhang and W. Xu, "Effect of Bias and Post Deposition Vacuum Annealing on Structure and Transmittance of ITO Films", Vacuum, 43(8), 1992, pp. 835 - 836

140. A. Mansingh and C. V. R. V. Kumar, "R.F. Sputtered Indium Tin Oxide Films on Water Cooled Substrates", Thin Solid Films, 167, 1988, pp. L11 - L13

141. V. Vasu and A. Subrahmanyam, "Photovoltaic Properties of Indium Tin Oxide (ITO)/Silicon Junctions Prepared by Spray Pyrolysis - Dependence on Oxidation Time", Semiconductor Science and Technology, 7, 1992, pp. 320 - 323

142. B. J. Kellett, A. Gauzzi, J. H. James, B. Dwir, D. Pavuna and F. K. Reinhart, "Superconducting YBa2Cu3O7-d Thin Films on GaAs with Conducting Indium-Tin-Oxide Buffer Layers", Applied Physics Letters, 57(24), 1990, pp. 2588 - 2590

143. B. J. Kellett, J. H. James, A. Gauzzi, B. Dwir, D. Pavuna and F. K. Reinhart, "In Situ Growth of Superconducting YBa2Cu3O7-d Thin Films on Si with Conducting Indium- Tin-Oxide Buffer Layers", Applied Physics Letters, 57(24), 1990, pp. 1146 - 1148

144. Y. Ohhata, F. Shinoki and S. Yoshida, "Optical Properties of r.f. Reactive Sputtered Tin-Doped In2O3 Films", Thin Solid Films, 59, 1979, pp. 255 - 261

145. J. C. C. Fan and F. J. Bachner, "Properties of Sn-Doped In2O3 Films Prepared by r.f. Sputtering", Journal of Electrochemical Society: Solid State Science and Techniology, 122(12), 1975, pp. 1719 - 1725

146. M. Just, N. Maintzer and I. Blech, "Stress in Transparent Conductive Sn-Doped Indium Oxide Thin Films", Thin Solid Films, 48, 1978, pp. L19 - L20

147. C. V. R. V. Kumar and A. Mansingh, "Effect of Target-Substrate Distance on the Growth and Properties of r.f. Sputtered Indium Tin Oxide Films", Journal of Applied Physics, 65(3), 1989, pp. 1270 - 1280

148. I Adesida, D. G. Ballegeer, J. W. Seo, A. Katterson, H. Chang, K. Y. Cheng and T. Gessert, "Etching of Indium Tin Oxide in Methane/Hydrogen Plasmas", Journal of Vacuum Science and Technology, B9(6), 1991, pp. 3551 - 3554

149. R. J. Saia, R. F. Kwasnick and C. Y. Wei, "Selective Reactive Ion Etching of Indium- Tin Oxide in a Hydrocarbon Gas Mixture", Journal of Electrochemical Society, 138(2), 1991, pp. 493 - 496

150. H. F. Sahafi, "A Study of Reactive Ion Etching of Gallium Arsenide in Mixtures of Methane and Hydrogen Plasmas", Ph.D. Thesis, University of Middlesex, UK, 1992.

151. F. T. J. Smith and S. L. Lyu, "Effects of Heat Treatment on Indium Tin Oxide Films", Journal of Electrochemical Society : Solid State Science and Technology, 128(11), 1981, pp. 2388 - 2393

152. W. G. Haines and R. H. Bube, "Effects of Heat Treatment on the Optical and Electrical Properties of Indium-Tin Oxide Films", Journal of Applied Physics, 49(1), 1978, pp. 304 - 307

153. C. H. L. Weijtens, "Influence of the Deposition and Anneal Temperature on the Electrical Properties of Indium Tin Oxide", Journal of Electrochemical Society, 138(11), 1991, pp. 3432 - 3434

154. C. H. L. Weijtens and P. A. C. van Loon, "Low Resistive, Ohmic Contacts to Indium Tin Oxide", Journal of Electrochemical Society, 137(12), 1990, pp. 3928 - 3930

155. A. K. Srivastava, B. M. Arora and S. Guha, "Measurement of Richardson Constant of GaAs Schottky Barriers", Solid State Electronics, 24, 1981, pp. 185 - 191

156. M. Missous, E. H. Rhoderick, D. A. Woolf and S. P. Wilkes, "On the Richardson Constant of Intimate Metal-GaAs Schottky Barriers", Semiconductor Science and Technology, 7, 1992, pp. 218 - 221

157. H. Norde, "A Modified Forward I-V Plot for Schottky Diodes with High Series Resistance", Journal of Applied Physics, 50, 1979, pp. 5052 - 5053

158. C. D. Lien, F. C. T. So and M. A. Nicolet, "An Improved Forward I-V Method for Non-ideal Schottky Diodes with High Series Resistance", IEEE Transactions on Electron Devices, ED-31, 1984, pp. 1502 - 1503

159. R. M. Cibils and R. H. Buitrago, "Forward I-V Plot for Non-ideal Schottky Diodes with High Series Resistance", Journal of Applied Physics, 58, 1985, pp. 1075 - 1077

160. D. Donoval, J. De Sousa Pires, P. A. Tove and R. Harman, "A Self Consistent Approach to IV Measurements on Rectifying Metal-Semiconductor Contacts", Solid State Electronics, 32(11), 1989, pp. 961 - 964

161. D. Mui, S. Strite and H. Morko�, "On the Barrier Lowering and Ideality Factor of Ideal Al/GaAs Schottky Diodes", Solid State Electronics, 34(10), 1991, pp. 1077 - 1081

162. A. Iliadis, "Barrier Height Reduction in Au-Ge Schottky Contacts to n-Type GaAs", Journal of Vacuum Science and Technology, B5(5), 1987, pp. 1340 - 1345

163. J. H. Werner and H. H. G�ttler, "Barrier Inhomogeneities at Schottky Contacts", Journal of Applied Physics, 69(3), 1991, pp. 1522 - 1533

164. M. O. Aboelfotoh, "Temperature Dependence of the Schottky-Barrier Height of Tungsten on n-Type and p-Type Silicon", Solid State Electronics, 34(1), 1991, pp. 51 - 55

165. F. H. Mullins and A. Brunnschweiller, "The Effects of Sputtering Damage on the Characteristics of Molybdenum-Silicon Schottky Barrier Diodes", Solid State Electronics, 19, 1976, pp. 47 - 50.

166. D. V. Morgan, Y. H. Aliyu, A. Salehi and R. W. Bunce, "Sputter-Induced Damage in ITO/n-GaAs Schottky Barrier Diodes", Proceedings of WOCSDICE, 1994

167. D. A. Vandenbroucke, R. L. Meirhaeghe, W. H. Lafl�re and F. Cardon, "Sputter Induced Damage in Al/n-GaAs and Al/p-GaAs Schottky Barriers", Semiconductor Science and Technology, 2, 1987, pp. 293 - 298

168. W. J. Devlin, C. E. C. Wood, R. Stall and L. F. Eastman, "A Molybdenium Source, Gate and Drain Metalization System for GaAs MESFET Layers Grown by Molecular Beam Epitaxy", Solid State Electronics, 23, 1980, pp. 823 - 829

169. A. A. Lakhani, "The Role of Compound Formation and Heteroepitaxy in Indium Based Ohmic Contacts to GaAs", Journal of Applied Physics, 56(6), 1984, pp. 1888 - 1891

170. J. M. Shannon, "Reducing the Effective Height of a Schottky Barrier Using Low-energy Ion Implantation", Applied Physics Letters, 24, 1974, pp. 369 - 371

171. J. K. Luo and H. Thomas, "Transport Properties of Indium Tin Oxide/p-InP Structures", Applied Physics Letters, 62(7), 1993, pp. 705 - 707

172. J. D. Wiley and G. L. Miller, "Series Resistance Effects in Semiconductor CV Profiling", IEEE Transactions on Electron Devices, ED-22 (5), 1975, pp. 265 - 272

173. K. Steiner, "Capacitance-Voltage Measurements on Schottky Diodes with Poor Ohmic Contacts", IEEE Transactions on Instrumentation and Measurement, 42 (1), 1993, pp. 39 - 43

174. V. Venkatesan, K. Das, J. A. von Windheim and M. W. Geis, "Effect of Back Contact Impedence on Frequency Dependence of Capacitance-Voltage Measurements on Metal/Diamond Diodes", Applied Physics Letters, 63 (8), 1993, pp. 1065 - 1067

175. S. W. Pang, G. A. Lincoln, R. W. McClelland, P. D. De Graff, M. W. Geis and W. J. Piacentini, "Effects of Dry Etching on GaAs", Journal of Vacuum Science and Technology, B1, 1983, pp. 1334 - 1337

176. S. C. Wu, D. M. Scott, Wei-Xi Chen, S. S. Lau, "The Effects of Ion Beam Etching on Si, Ge, GaAs and InP Schottky Barrier Diodes", Journal of Electrochemical Society, 132, 1985, pp. 918 - 922

177. A. A. Rezazadeh, Ph.D. Thesis, University of Sussex, 1982

178. Y. H. Aliyu, D. V. Morgan and R. W. Bunce, "Thermal Stability of Indium-Tin- Oxide/n-GaAs Schottky Diodes", Electronics Letters, 28(2), 1992, pp. 142 - 143

179. N. Balasubramanian and A. Subrahmanyam, "Schottky Diode Properties and the Photovoltaic Behaviour of Indium Tin Oxide (ITO)/n-GaAs Junctions - Effect of Arsenic Defficient GaAs Surface", Semiconductor Science and Technology, 5, 1990, pp. 870 - 876

180. H. Kobayashi, T. Ishida, Y. Nakano and H. Tsubomura, "Mechanism of Carrier Transport in Highly Efficient Solar Cells Having Indium Tin Oxide/Si Junctions", Journal of Applied Physics, 69(3), 1991, pp. 1736 - 1743

181. V. Korobov, M. Leibovitch and Y. Shapira, "Indium Oxide Schottky Junctions with InP and GaAs", Journal of Applied Physics, 74(5), 1993, pp. 3251 - 3255

182. A. H. Khalid and A. A. Rezazadeh, "Fabrication and Characterisation of Transparent- Gate Filed Effect Transistors Using Indium Tin Oxide", IEE Proceedings: Optoelectronics, 143(1), 1996, pp. 7 - 11

183. D. J. Lawrence, D. C. Abbas, D. J. Phelps and F. T. J. Smith, "GaAs0.6P0.4 LED's with Efficient Transparent Contacts for Spatially Uniform Light Emission", IEEE Transactions on Electron Devices, ED-30, 1983, pp. 580 - 585

184. L. W. Tu, E. F. Schubert, H. M. O'Bryan, Y. H. Wang, B. E. Weir, G. J. Zydzik and A. Y. Cho, "Transparent Conductive Metal-Oxide Contacts in Vertical-Injection Top- Emitting Quantum Well Lasers", Applied Physics Letters, 58, 1991, pp. 790 - 792

185. T. J. Cunningham, L. J. Guido, J. C. Beggy and R. C. Barker, "Annealed Indium Oxide Transparent Ohmic Contacts to GaAs", Journal of Applied Physics, 71(2), 1992, pp. 1070 - 1072

186. P. A. Barnes, A. Y. Cho, "Non-alloyed ohmic contacts to n-GaAs by Molecular Beam Epitaxy", Applied Physics Letters, 33, 1978, pp. 651 - 653

187. D. E. Kren and A. A. Rezazdeh, "Low Ohmic Contacts to C-Doped p-GaAs with Au/Zn/Au Structure", Electronics Letters, 28(13), 1992, pp. 1248 - 1249

188. R. K. Ball, "Improvements in the Topography of AuGeNi-Based Ohmic contacts to n- GaAs", Thin Solid Films, 176, 1989, pp. 55 - 68

189. M. P. Grimshaw, Ph.D. Thesis, Imperial College of Science, Technology and Medicine, University of London, 1992

190. E. Suematsu and H. Ogawa, "Frequency Response of HBT's as Photodetectors", IEEE Microwave and Guided Wave Letters, 3(7), 1993, pp. 217 - 218

191. L. Y. Leu, J. T. Gardner and S. R. Forrest, "High Sensitivity InP/InGaAs Heterojunction Photo-transistor", Applied Physics Letters, 57(12), 1990, pp. 1251 - 1253

192. S. Lee, J. Kau and H. Lin, "Origin of High Offset Voltage in an AlGaAs/GaAs Heterojunction Bipolar Transistor", Applied Physics Letters, 45(10), 1984, pp. 1114 - 1116

193. J. R. Hayes, F. Capasso, R. J. Malik, A. C. Gossard and W. Weigmann, "Optimum Emitter Grading for Heterojunction Bipolar Transistors", Applied Physics Letters, 43(10), 1983, pp. 949 - 951

194. J. R. Hayes, A. C. Gossard and W. Weigmann, "Collector/Emitter Offset Voltage in Double Heterojunction Bipolar Transistors", Electronics Letters, 20(19), 1984, pp. 766 - 767

195. H. Beneking and L. M. Su, "Double Heterojunction NpN GaAlAs/GaAs Bipolar Transistor", Electronics Letters, 18(1), 1982, pp. 25 - 26

196. S. Tiwari, S. L. Wright and A. W. Kleinsasser, "Transport and Related Properties of (Ga, Al)As/GaAs Double Heterostructure Bipolar Junction Transistors, IEEE Transactions on Electron Devices, ED-34(2), 1987, pp. 185 - 197

197. W. Liu, "Ideality Factor of Extrinsic Base Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors", Electronics Letters, 28(4), 1992, pp. 379 - 380

198. A. Marty, G. Rey and J. P. Bailbe, "Electrical Behaviour of an N-p-n GaAlAs/GaAs Heterojunction Transistor", Solid State Electronics, 22, 1979, pp. 549 - 557

199. A. A. Rezazadeh, H. Sheng and S. A. Bashar, "Invited Paper: InP-Based HBTs for Optical Telecommunications", International Journal of Optoelectronics, 10(6), 1996, pp. 489 - 493

200. J. C. Campbell and K. Ogawa, "Heterojunction Phototransistors for Long Wavelength Optical Receivers", Journal of Applied Physics, 53(2), 1982, pp. 1203 - 1208

201. N. Chand, P. A. Houston and P. N. Robson, "Gain of a Heterojunction Bipolar Phototransistor", IEEE Transactionson Electron Devices, ED-32(3), 1985, pp. 622 - 627

202. J. C. Campbell, A. G. Dentai, C. A. Burrus (Jr) and J. F. Ferguson, "InP/InGaAs Heterojunction Phototransistors", IEEE Journal of Quantum Electronics, QE-17(2), 1981, pp. 264 - 269

203. S. Svanberg, "Atomic and Molecular Spectroscopy - Basic Aspects and Practical Applications, Springer Series on Atoms and Plasmas", (Published by: Springer-Verlag, Berlin), 2nd Edition, 1992, pp. 128 - 130

204. S. A. Bashar and A. A. Rezazadeh, "Fabrication and Spectral Response Analysis of AlGaAs/GaAs and InP/InGaAs HPTs with Transparent ITO Emitter Contacts", IEE Proceedings - Optoelectronics, 143(1), 1996, pp. 89 - 93

205. R. A. Milano, T. H. Windhorn, E. R. Anderson, G. E. Stillman, R. D. Dupius and P. D. Dapkus, "Al0.5Ga0.5As/GaAs Heterojunction Phototransistors Grown by Metalorganic Chemical Vapor Deposition", Applied Physics Letters, 34(9), 1979, pp. 562 - 564

206. M. Tobe, Y. Amemiya, S. Sakai and M. Umeno, "High Sensitivity InGaAsP/InP Phototransistors", Applied Physics Letters, 37(1), 1980, pp. 73 - 75

207. P. D. Wright, R. J. Nelson and T. Cella, "High Gain InGaAsP/InP Heterojunction Phototransistors", Applied Physics Letters, 37(2), 1980, pp. 192 - 194

208. J. P. Vilcot, V. Magnin, J. van de Casteel, J. Harari, J. P Gouy, B. Bellini and D. Decoster, "Edge-Coupled InGaAs/InP Phototransistors for Microwave Radio Fibre Links", Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, London, UK, 24th - 25th November, 1997, pp. 163 - 168

209. K. Kato, S. Hata, K. Kawano and A. Kozen, "Design of Ultrawide-Band, High Sensitivity p-i-n Photodetectors", IEEE Transactions on Electronics, E-76-C(2), 1993, pp. 214 - 221

210. H. Burkhard, H. W. Dinges and E Kuphal, "Optical Properties of In1-xGaxP1-yAsy, InP, GaAs and GaP Determined by Ellipsiometry", Journal of Applied Physics, 53(1), 1982, pp. 655 - 662

211. P. Chandra, L. A. Coldren, K. E. Strege, "Refractive Index Data from GaxIn1-xAsyP1-y Films", Electronics Letters, 17(1), 1981, pp. 6 - 7

212. "Properties of GaAs", INSPEC Publication, EMIS Data Review Series No. 2, 2nd Edition., 1990, pp. 513 - 528

213. A. R. Forouhi and I. Bloomer, "Optical Functions of Intrinsic InP : General Remarks" in Properties of Indium Phosphide, INSPEC, EMIS Data Review Series No. 6, 1991, pp. 105 - 137

214. S. Adachi, "Optical Functions of InGaAsP : Tables", in Properties of Indium Phosphide, INSPEC, EMIS Data Review Series No. 6, 1991, pp. 416 - 428

215. D. Jenkins and A. J. Moseley, "Measurement of Absorption Co-efficients of Ga0.47In0.53As Over the Wavelength Range 1.0 - 1.7mm", Electronics Letters, 21(25/26), 1985, pp. 1187 - 1189

216. D. E. Aspnes, S. M. Kelso, R. A. Logan and R. Bhat, "Optical Properties of AlxGa1-xAs", Journal of Applied Physics, 60(2), 1986, pp. 754-767

217. D. R. Wight, "Hole Diffusion Length and Coefficient in n-Type GaAs", in Properties of Gallium Arsenide (2nd Edition), INSPEC, EMIS Data Review Series No. 2, 1990, pp. 105 - 106

218. D. R. Wight and K. Duncan, "Electron Diffusion Length and Coefficient in p-Type GaAs", in Properties of Gallium Arsenide (2nd Edition), INSPEC, EMIS Data Review Series No. 2, 1990, pp. 93 - 94

219. R. K. Ahrenkiel, "Minority Carrier Lifetime and Diffusion Length in AlGaAs", in Properties of Aluminium Gallium Arsenide, INSPEC, EMIS Data Review Series No. 7, 1993, pp. 221-224

220. R. K. Ahrenkiel, "Measurement of Minority-Carrier Lifetime by Time-Resolved Photoluminescence", Solid State Electronics, 35, 1992, pp. 239 - 250

221. R. K. Ahrenkiel, "Hole Diffusion Length in n-InP", in Properties of Indium Phosphide, INSPEC, EMIS Data Review Series No. 6, 1991, pp. 89 - 90

222. A. Etchebery, M. Etman, B. Fotouhi, J. Gautron, J. L. Sculfort, P. Lemasson, "Diffusion Length of Minority-Carrier in Normal-Type Semiconductors - A Photo-Electrochemical Determination in Aqueous Solvents", Journal of Applied Physics, 53(12), 1982, pp. 8867 - 8873

223. N. Chand, "Carrier Diffusion Lengths and Lifetimes in InGaAs", in Properties of Indium Gallium Arsenide, INSPEC, EMIS Data Review Series No. 8, 1993, pp. 127 - 129

224. Y. Takeda, M. Kuzuhara, A. Sasaki, "Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate", Japanese Journal of Applied Physics, 19, 1980, pp. 899 - 903

225. P. Ambree, B. Gruska, K. Wandel, "Dependence of the Electron Diffusion Length in p- InGaAs Layers on the Acceptor Diffusion Process", Semiconductor Science and Technology, 7, 1992, pp. 858 - 860

226. T. Ota, K. Oe, M. Yamaguchi, "Determination of Electron Diffusion Length from Photoluminescence Measurements in InxGa1-xAs Junctions", Journal of Applied Physics, 46, 1975, pp. 3674 - 3675

227. R. K. Ahrenkiel, "Electron Diffusion Length and Diffusion Coefficient in p-InP", in Properties of Indium Phosphide, INSPEC, EMIS Data Review Series No. 6, 1991, pp. 75 - 76

228. S. A. Bashar and A. A. Rezazadeh, "Realisation of Fast Photoreceivers Based on ITO/n- GaAs Schottky Diodes", Proceedings of IEE Colloquium on Optical Detectors and Receivers, London, UK, October, 1993

229. A. H. Khalid, Ph.D. Thesis, King's College, University of London, (Expected date of submission) 1999.

230. S. A. Bashar and A. A. Rezazadeh, "Transparent Emitter Contacts to InP/InGaAs HPTs for Long Haul Optical Telecommunications Applications", Proceedings of IEEE International Conference on Telecommunications, Bali, Indonesia, April, 1995, pp. 320 - 323

231. S. A. Bashar, H. Sheng and A. A. Rezazadeh, "Prospects of InP Based HBTs for Optical Telecommunications", Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, London, UK, November, 1994, pp. 1 - 6

232. S. A. Bashar and A. A. Rezazadeh, "Characterisation of Transparent ITO Emitter Contact InP/InGaAs Heterojunction Bipolar Transistors", Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, London, UK, November, 1995, pp. 76 - 81

233. S. A. Bashar and A. A. Rezazadeh, "Analysis and Modeling of Spectral Response for GaAs Schottky Diodes and InP/InGaAs HPTs Fabricated Using Indium Tin Oxide", Proceedings of The 5th European Heterostructure Workshop, Cardiff, UK, September, 1995

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