Shabbir A. Bashar,
Ph.D.
e-mail: shabbir@betelco.com
List of Publications
Journal/Letter Publications
- "Oxide-Defined GaAs Vertical-Cavity Surface-Emitting Lasers on Si Substrates",
Y. Xiong, Y. Zhou, Z. H. Zhu, Y. H. Lo, C. Ji, S. A. Bashar, A. A. Allerman, T. Hargett,
R. Sieg, and K. D. Choquette, IEEE Photonics Technology Letters, Vol. 12, No. 2, Feb. 2000,
pp.110-112.
- "Reliability Investigation of InGaP/GaAs HBTs Under Current and Temperature
Stress - Invited Paper",
A. A. Rezazadeh, S. A. Bashar, H. Sheng, F. A. Amin, A. H. Khalid, M. Sotoodeh, M. A.
Crouch, L. Cattani, F. Fantini and J. J. Liou, Journal of Microelectronics and Reliability,
Vol. 39, No. 12, 1999, pp. 1809-1816.
- "InP Based HBTs for Optical Telecommunications - Invited Paper",
A. A. Rezazadeh, H. Sheng & S. Bashar, International Journal of Optoelectronics,
Vol. 10, no. 6, 1996, pp. 489-493
- "Fabrication and Spectral Response Analysis of AlGaAs/GaAs and InP/InGaAs HPTs with
Transparent ITO Emitter Contacts",
S. A. Bashar and A. A. Rezazadeh, IEE Proceedings on Opto-electronics, Vol. 143, Issue 1,
1996, pp. 89-93
- "Optically Transparent ITO Emitter Contacts in the Fabrication of InP/InGaAs HPTs",
S. A. Bashar and A. A. Rezazadeh, IEEE Transactions on Microwave Theory and
Techniques, Vol.43(9), 1995, pp.2299-2303
- "Optically Transparent Indium Tin Oxide (ITO) Ohmic Contacts in the Fabrications
of Vertical Cavity Surface-Emitting Lasers",
M. A. Matin, A. F. Jezierski, S. A. Bashar, D. E. Lacklison, T. M. Benson, T. S. Cheng,
J. S. Roberts, T. E. Sale, J. W. Orton, C. T. Foxon and A. A. Rezazadeh, Electronics Letters,
Vol. 30(4), 1994, pp. 318-320
Publications in Conference, Colloquium and Workshop Proceedings
- "High Temperature and Isolator-free 1310nm Photonic Integrated Surface
Emitter Operating at 2.5Gb/s Over 25km Transmission",
M. Choy, W. Yeo, T. Eustis, J. Chaung, S. A. Bashar, J. Bergevin, G. Tarsha,
S. Hu, Tuoh-Bin Ng, S. Zaytsev, J. Erickson, D. Tsou, L. Boman, S. Hummel, D. Sinclair and
Y. H. Lo, IEEE Optical Fiber Communication Conference, Anaheim, USA,
17th - 22nd March, 2002, pp. 719-721.
- "Bias and Temperature Stress Reliability of InGaP/GaAs HBTs",
A.A. Rezazadeh, S.A. Bashar, H. Sheng, F.A. Amin, L. Cattani and J.J. Liou,
Proceedings of International Reliability Physics Symposium, San Jose, USA,
10th - 13th April, 2000.
- "Room temperature stress-free GaAs/Si wafer bonding technology for optical
interconnects",
Y.-H. Lo, Y. Xiong, Y. Zhou, Z.H. Zhu, Tuoh-Bin Ng and S. A. Bashar, HOTC (Heterogeneous
Optoelectronics Technology Center) Newsletters, May, 1999.
- "850nm vertical-cavity surface-emitting lasers on Si substrates",
Y. Zhou, Y. Xiong, Y.-H. Lo; C. Ji, Z.H. Zhu, S.A. Bashar, A.A. Allerman, T. Hargett,
R. Sieg and K.D. Choquette, NATO’s Conference Proceedings (WOFE), 1999.
- "Design and Reliasation of InP-based HBTs for Optical Telecommunications",
A A Rezazadeh, S Sheng, S A Bashar and D Wake, IEE Colloquium on Opto-Electronic Interfacing
at Microwave Frequencies, Savoy Place, London, 20 April 1999, pp4/1 -4/7 (ref: 99/045).
- "Noise Characterization of AlGaAs/GaAs HBTs with Different Emitter Contacts",
N. B. Lukyanchikova, N. P. Garbar, M. V. Petrichuk, A. A. Rezazadeh & S. A. Bashar,
Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave
and Optoelectronic Applications - EDMO, London, UK, 24th - 25th November, 1997, pp. 157-162
- "Effect of Base Metal Contacts on the Performance of InGaP/GaAs HBTs under Temperature
and Bias Stress",
S. A. Bashar, H. Sheng, F. A. Amin, A. A. Rezazadeh, M. A. Crouch, F. Adami
and L. Cattani, Proceedings of IEEE International Workshop on High Performance Electron Devices
for Microwave and Optoelectronic Applications - EDMO, , London, UK, 24th - 25th November, 1997,
pp. 285-290
- "Characteristics of AlGaAs/GaAs and InGaP/GaAs HBTs at High Temperature",
S. A. Bashar, F. A. Amin, A. A. Rezazadeh and M. A. Crouch, - Proceedings of IEEE International
Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO,
Leeds, UK, 25th - 26th November, 1996, pp. 126-131
- "Noise Properties of AlGaAs/GaAs HPTs with Transparent ITO Emitter Contacts",
N. B. Lukyanchikova, N. P. Garbar, M. V. Petrichuk, A. A. Rezazadeh and S. A. Bashar,
Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and
Optoelectronic Applications - EDMO, , Leeds, UK, 25th - 26th November, 1996, pp. 50-55
- "Characterisation of Transparent ITO Emitter Contact InP/InGaAs Heterojunction Bipolar
Transistors",
S. A. Bashar and A. A. Rezazadeh, Proceedings of IEEE International Workshop
on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO,
London, Nov., 1995, pp. 76-81
- "Analysis and Modeling of Spectral Response for GaAs Schottky Diodes and InP/InGaAs HPTs
Fabricated Using Indium Tin Oxide",
S. A. Bashar and A. A. Rezazadeh, Proceedings of The 5th
European Heterostructure Workshop, Cardiff, 17th-19th September, 1995
- "Transparent Emitter Contacts to InP/InGaAs HPTs for Long Haul Optical Telecommunications
Applications",
S. A. Bashar and A. A. Rezazadeh, Proceedings of IEEE International Conference
on Telecommunications - ICT, , Bali, Indonesia, 3rd-5th April, 1995, pp. 320-323
- "Fabrication and Characterisation of a Transparent Gate HEMT Using Indium Tin Oxide",
A. H. Khalid, S. A. Bashar and A. A. Rezazadeh, Proceedings of IEEE International Workshop on High
Performance Electron Devices for Microwave & Optoelectronic Applications - EDMO, London, Nov.,
1994, pp. 99-104
- "Prospects of InP Based HBTs for Optical Telecommunications",
S. A. Bashar, H. Sheng and A. A. Rezazadeh, Proceedings of IEEE International Workshop
on High Performance Electron Devices for Microwave & Optoelectronic Applications - EDMO,
London, Nov., ‘94, pp. 1-6
- "Transparent Contacts to Opto-Electronic Devices Using Indium Tin Oxide (ITO)",
S. A. Bashar and A. A. Rezazadeh, Proceedings of IEEE International Conference on Telecommunications
- ICT, Dubai, UAE, 10th-12th January, 1994, pp. 259-261
- "Transparent Indium Tin Oxide (ITO) Ohmic Contacts to both p and n GaAs for Surface-
emitting Lasers",
A. F. Jezierski, M. A. Matin, S. A. Bashar, T. S. Cheng, D. Lacklison,
T. Foxon, T. M. Benson, M. Heath, J. Orton & A. A. Rezazadeh, IEEE/LEOS Annual Meeting
Proceedings, San Jose, USA, 15th-18th November, 1993
- "Realisation of Fast Photoreceivers Based on ITO/n-GaAs Schottky Diodes",
S. A. Bashar and A. A. Rezazadeh, Proceedings of IEE Colloquium on Optical Detectors & Receivers,
London, October, 1993
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