Shabbir A. Bashar, Ph.D.
e-mail: shabbir@betelco.com

List of Publications



Journal/Letter Publications

  1. "Oxide-Defined GaAs Vertical-Cavity Surface-Emitting Lasers on Si Substrates",
    Y. Xiong, Y. Zhou, Z. H. Zhu, Y. H. Lo, C. Ji, S. A. Bashar, A. A. Allerman, T. Hargett, R. Sieg, and K. D. Choquette, IEEE Photonics Technology Letters, Vol. 12, No. 2, Feb. 2000, pp.110-112.

  2. "Reliability Investigation of InGaP/GaAs HBTs Under Current and Temperature Stress - Invited Paper",
    A. A. Rezazadeh, S. A. Bashar, H. Sheng, F. A. Amin, A. H. Khalid, M. Sotoodeh, M. A. Crouch, L. Cattani, F. Fantini and J. J. Liou, Journal of Microelectronics and Reliability, Vol. 39, No. 12, 1999, pp. 1809-1816.

  3. "InP Based HBTs for Optical Telecommunications - Invited Paper",
    A. A. Rezazadeh, H. Sheng & S. Bashar, International Journal of Optoelectronics, Vol. 10, no. 6, 1996, pp. 489-493

  4. "Fabrication and Spectral Response Analysis of AlGaAs/GaAs and InP/InGaAs HPTs with Transparent ITO Emitter Contacts",
    S. A. Bashar and A. A. Rezazadeh, IEE Proceedings on Opto-electronics, Vol. 143, Issue 1, 1996, pp. 89-93

  5. "Optically Transparent ITO Emitter Contacts in the Fabrication of InP/InGaAs HPTs",
    S. A. Bashar and A. A. Rezazadeh, IEEE Transactions on Microwave Theory and Techniques, Vol.43(9), 1995, pp.2299-2303

  6. "Optically Transparent Indium Tin Oxide (ITO) Ohmic Contacts in the Fabrications of Vertical Cavity Surface-Emitting Lasers",
    M. A. Matin, A. F. Jezierski, S. A. Bashar, D. E. Lacklison, T. M. Benson, T. S. Cheng, J. S. Roberts, T. E. Sale, J. W. Orton, C. T. Foxon and A. A. Rezazadeh, Electronics Letters, Vol. 30(4), 1994, pp. 318-320


Publications in Conference, Colloquium and Workshop Proceedings

  1. "High Temperature and Isolator-free 1310nm Photonic Integrated Surface Emitter Operating at 2.5Gb/s Over 25km Transmission",
    M. Choy, W. Yeo, T. Eustis, J. Chaung, S. A. Bashar, J. Bergevin, G. Tarsha, S. Hu, Tuoh-Bin Ng, S. Zaytsev, J. Erickson, D. Tsou, L. Boman, S. Hummel, D. Sinclair and Y. H. Lo, IEEE Optical Fiber Communication Conference, Anaheim, USA, 17th - 22nd March, 2002, pp. 719-721.

  2. "Bias and Temperature Stress Reliability of InGaP/GaAs HBTs",
    A.A. Rezazadeh, S.A. Bashar, H. Sheng, F.A. Amin, L. Cattani and J.J. Liou, Proceedings of International Reliability Physics Symposium, San Jose, USA, 10th - 13th April, 2000.

  3. "Room temperature stress-free GaAs/Si wafer bonding technology for optical interconnects",
    Y.-H. Lo, Y. Xiong, Y. Zhou, Z.H. Zhu, Tuoh-Bin Ng and S. A. Bashar, HOTC (Heterogeneous Optoelectronics Technology Center) Newsletters, May, 1999.

  4. "850nm vertical-cavity surface-emitting lasers on Si substrates",
    Y. Zhou, Y. Xiong, Y.-H. Lo; C. Ji, Z.H. Zhu, S.A. Bashar, A.A. Allerman, T. Hargett, R. Sieg and K.D. Choquette, NATO’s Conference Proceedings (WOFE), 1999.

  5. "Design and Reliasation of InP-based HBTs for Optical Telecommunications",
    A A Rezazadeh, S Sheng, S A Bashar and D Wake, IEE Colloquium on Opto-Electronic Interfacing at Microwave Frequencies, Savoy Place, London, 20 April 1999, pp4/1 -4/7 (ref: 99/045).

  6. "Noise Characterization of AlGaAs/GaAs HBTs with Different Emitter Contacts",
    N. B. Lukyanchikova, N. P. Garbar, M. V. Petrichuk, A. A. Rezazadeh & S. A. Bashar, Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, London, UK, 24th - 25th November, 1997, pp. 157-162

  7. "Effect of Base Metal Contacts on the Performance of InGaP/GaAs HBTs under Temperature and Bias Stress",
    S. A. Bashar, H. Sheng, F. A. Amin, A. A. Rezazadeh, M. A. Crouch, F. Adami and L. Cattani, Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, , London, UK, 24th - 25th November, 1997, pp. 285-290

  8. "Characteristics of AlGaAs/GaAs and InGaP/GaAs HBTs at High Temperature",
    S. A. Bashar, F. A. Amin, A. A. Rezazadeh and M. A. Crouch, - Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, Leeds, UK, 25th - 26th November, 1996, pp. 126-131

  9. "Noise Properties of AlGaAs/GaAs HPTs with Transparent ITO Emitter Contacts",
    N. B. Lukyanchikova, N. P. Garbar, M. V. Petrichuk, A. A. Rezazadeh and S. A. Bashar, Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, , Leeds, UK, 25th - 26th November, 1996, pp. 50-55

  10. "Characterisation of Transparent ITO Emitter Contact InP/InGaAs Heterojunction Bipolar Transistors",
    S. A. Bashar and A. A. Rezazadeh, Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications - EDMO, London, Nov., 1995, pp. 76-81

  11. "Analysis and Modeling of Spectral Response for GaAs Schottky Diodes and InP/InGaAs HPTs Fabricated Using Indium Tin Oxide",
    S. A. Bashar and A. A. Rezazadeh, Proceedings of The 5th European Heterostructure Workshop, Cardiff, 17th-19th September, 1995

  12. "Transparent Emitter Contacts to InP/InGaAs HPTs for Long Haul Optical Telecommunications Applications",
    S. A. Bashar and A. A. Rezazadeh, Proceedings of IEEE International Conference on Telecommunications - ICT, , Bali, Indonesia, 3rd-5th April, 1995, pp. 320-323

  13. "Fabrication and Characterisation of a Transparent Gate HEMT Using Indium Tin Oxide",
    A. H. Khalid, S. A. Bashar and A. A. Rezazadeh, Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications - EDMO, London, Nov., 1994, pp. 99-104

  14. "Prospects of InP Based HBTs for Optical Telecommunications",
    S. A. Bashar, H. Sheng and A. A. Rezazadeh, Proceedings of IEEE International Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications - EDMO, London, Nov., ‘94, pp. 1-6

  15. "Transparent Contacts to Opto-Electronic Devices Using Indium Tin Oxide (ITO)",
    S. A. Bashar and A. A. Rezazadeh, Proceedings of IEEE International Conference on Telecommunications - ICT, Dubai, UAE, 10th-12th January, 1994, pp. 259-261

  16. "Transparent Indium Tin Oxide (ITO) Ohmic Contacts to both p and n GaAs for Surface- emitting Lasers",
    A. F. Jezierski, M. A. Matin, S. A. Bashar, T. S. Cheng, D. Lacklison, T. Foxon, T. M. Benson, M. Heath, J. Orton & A. A. Rezazadeh, IEEE/LEOS Annual Meeting Proceedings, San Jose, USA, 15th-18th November, 1993

  17. "Realisation of Fast Photoreceivers Based on ITO/n-GaAs Schottky Diodes",
    S. A. Bashar and A. A. Rezazadeh, Proceedings of IEE Colloquium on Optical Detectors & Receivers, London, October, 1993




These pages are hosted courtesy of:
Bengal Telecommunication and Electric Co. - BETELCO
E-mail : info@betelco.com